The Rohm Semiconductor RJU002N06T106 MOSFET is a N-channel, SMD (SMT) device with a drain-source breakdown voltage of 60V and a continuous drain current of 200mA (Ta).

• GPTDescription: It has a gate-source threshold voltage of 1.5V @ 1mA and a maximum input capacitance of 18pF @ 10V.
• GPTDescription: This MOSFET has a maximum Rds On of 2.3 Ohm @ 200mA, 4.5V and a drive voltage of 2.5V, 4.5V.
• GPTDescription: It is not recommended for new designs and has an operating temperature range of 150°C (TJ).
• GPTDescription: This device is part of the UMT3 case/package series, which includes SC-70 and SOT-323 dimensions.
• GPTDescription: The popularity of this MOSFET is medium, and its supply and demand status is sufficient.