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Same model may have multiple batches, images only for reference.
RK3055ETL Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RK3055ETL

Part No RK3055ETL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 8A DPAK
Datasheet
RK3055ETL Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Input Capacitance 520pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 20W (Tc)
Maximum Rds On at Id,Vgs 150 mOhm @ 4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package CPT3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 115214-RK3055ETL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RK3055ETL CAD Model

Description

The 115214-RK3055ETL is an N-channel MOSFET transistor designed for various electronic applications from Rohm Semiconductor. It has a power dissipation of 20W and a drain-source breakdown voltage of 60V.

  • Power Dissipation: 20W
  • Drain-Source Breakdown Voltage: 60V
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On @ Id,Vgs: 150 mOhm @ 4A, 10V
  • Package: CPT3
  • Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63

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Pricing & Ordering

Quantity Unit Price Ext. Price
145+ $0.4043 $58.6235
350+ $0.3315 $116.0250
540+ $0.3211 $173.3940
745+ $0.3107 $231.4715
965+ $0.3003 $289.7895
1,290+ $0.2691 $347.1390
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Availability: 4,000 pieces
MOQ: 145 pcs
Order Increment : 1 pcs
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