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RMW200N03TB

Part No RMW200N03TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 20A 8PSOP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 29nC @ 10V
Max Input Capacitance 1780pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3W (Ta)
Maximum Rds On at Id,Vgs 4.2 mOhm @ 20A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PSOP
Dimension 8-SMD, Flat Lead
Win Source Part Number 139360-RMW200N03TB
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RMW200N03TB CAD Model

Description

The RMW200N03TB is a MOSFET semiconductor component manufactured by Rohm Semiconductor.

  • Supply and Demand Status: limited
  • Win Source Part Number: 139360-RMW200N03TB
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 20A (Ta)
  • Max Gate Charge: 29nC @ 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2102 $60.5100
120+ $0.9931 $119.1720
185+ $0.9620 $177.9700
250+ $0.9309 $232.7250
325+ $0.9000 $292.5000
430+ $0.8069 $346.9670
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,600 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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