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RSD200N05TL

Part No RSD200N05TL
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 45V 20A CPT3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 45V
Continuous Drain Current at 25°C 20A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 12nC @ 5V
Max Input Capacitance 950pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 20W (Tc)
Maximum Rds On at Id,Vgs 28 mOhm @ 20A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package CPT3
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 027518-RSD200N05TL
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RSD200N05TL CAD Model

Description

The Rohm Semiconductor MOSFET is a medium-popularity discrete semiconductor product that is balanced in terms of supply and demand.

  • Type: N-channel MOSFET
  • Application: low-voltage applications
  • Maximum drain-source breakdown voltage: 45V
  • Maximum continuous drain current: 20A @ 25°C
  • Maximum power dissipation: 20W
  • Package: CPT3 package
  • Maximum Rds On: 28 mOhm @ 20A and 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
125+ $0.4806 $60.0750
295+ $0.3945 $116.3775
455+ $0.3821 $173.8555
625+ $0.3698 $231.1250
810+ $0.3575 $289.5750
1,085+ $0.3204 $347.6340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,395 pieces
MOQ: 125 pcs
Order Increment : 1 pcs
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