The RSJ451N04FRATL is a discrete semiconductor product of the Transistors - FETs, MOSFETs - Single category.

• Technology: MOSFET (Metal Oxide)
• FET Type: N-Channel
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
• Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Power Dissipation (Max): 50W (Tc)
• Package/Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
• Vgs (Max): ±20V
• Temperature Range: 150°C (TJ)