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Same model may have multiple batches, images only for reference.
RSQ025P03TR Real Image
Same model may have multiple batches, images only for reference.

RSQ025P03TR

Part No RSQ025P03TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 2.5A TSMT6
Datasheet
RSQ025P03TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 4.4nC @ 5V
Max Input Capacitance 320pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 110 mOhm @ 2.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT6 (SC-95)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 103865-RSQ025P03TR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RSQ025P03TR CAD Model

Description

The Rohm Semiconductor RSQ025P03TR is a P-channel MOSFET with a maximum power dissipation of 1.25W.

  • Drive Voltage: 4V and 10V
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 2.5A
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Rds On: 110 mOhm @ 2.5A, 10V
  • Suitable for use in: power management, DC-DC converters, and motor control

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Quantity Unit Price Ext. Price
140+ $0.4162 $58.2680
340+ $0.3416 $116.1440
525+ $0.3308 $173.6700
725+ $0.3202 $232.1450
935+ $0.3095 $289.3825
1,250+ $0.2774 $346.7500
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