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Same model may have multiple batches, images only for reference.
RSQ035N03TR Real Image
Same model may have multiple batches, images only for reference.

RSQ035N03TR

Part No RSQ035N03TR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 3.5A TSMT6
Datasheet
RSQ035N03TR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 7.4nC @ 5V
Max Input Capacitance 290pF @ 10V
Maximum Gate-Source Voltage 20V
Power Dissipation (Max) 1.25W (Ta)
Maximum Rds On at Id,Vgs 62 mOhm @ 3.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package TSMT6 (SC-95)
Dimension SOT-23-6 Thin, TSOT-23-6
Win Source Part Number 1092804-RSQ035N03TR
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RSQ035N03TR CAD Model

Description

The Rohm Semiconductor MOSFET is a N-channel polarity electronic component.

  • Power Dissipation (Max): 1.25W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 3.5A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate-Source Voltage: 20V
  • Maximum Rds on @ Id, Vgs: 62 mOhm @ 3.5A, 10V
  • Mounting: TSMT6 (SC-95) package
  • Dimension: SOT-23-6 Thin, TSOT-23-6
  • Categories: discrete semiconductor products
  • Popularity: medium

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5269 $57.9590
270+ $0.4324 $116.7480
415+ $0.4190 $173.8850
570+ $0.4054 $231.0780
740+ $0.3919 $290.0060
990+ $0.3514 $347.8860
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Availability: 35,000 pieces
MOQ: 110 pcs
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