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Same model may have multiple batches, images only for reference.
RT1C060UNTR Rohm Semiconductor
Same model may have multiple batches, images only for reference.

RT1C060UNTR

Part No RT1C060UNTR
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 20V 6A TSST8
Datasheet
RT1C060UNTR Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
Gate-Source Threshold Voltage 1V @ 1mA
Max Gate Charge 11nC @ 4.5V
Max Input Capacitance 870pF @ 10V
Maximum Gate-Source Voltage ±10V
Power Dissipation (Max) 650mW (Ta)
Maximum Rds On at Id,Vgs 28 mOhm @ 6A, 4.5V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-TSST
Dimension 8-SMD, Flat Lead
Win Source Part Number 101599-RT1C060UNTR
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian RT1C060UNTR CAD Model

Description

The Rohm Semiconductor MOSFET is a high-quality electronic component that is designed to provide efficient and reliable performance.

  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 6A (Ta)
  • Gate-Source Threshold Voltage: 1V @ 1mA
  • Maximum Gate Charge: 11nC @ 4.5V
  • Packaging: 8-TSST
  • Supply and Demand Status: balanced
  • Popularity: medium
  • RoHS compliant: true

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Pricing & Ordering

Quantity Unit Price Ext. Price
225+ $0.2610 $58.7250
540+ $0.2148 $115.9920
835+ $0.2079 $173.5965
1,150+ $0.2010 $231.1500
1,480+ $0.1952 $288.8960
1,990+ $0.1744 $347.0560
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,950 pieces
MOQ: 225 pcs
Order Increment : 1 pcs
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