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SCT3030ALHRC11

Part No SCT3030ALHRC11
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
Package Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 39mOhm @ 27A, 18V
Vgs(th) (Max) @ Id 5.6V @ 13.3mA
Gate Charge (Qg) (Max) @ Vgs 104 nC @ 18 V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 1526 pF @ 500 V
Power Dissipation (Max) 262W
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3
Base Product Number SCT3030
Standard Package 30
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278186-SCT3030ALHRC11
Ultra Librarian 3D Model Ultra Librarian SCT3030ALHRC11 CAD Model

Description

The Rohm Semiconductor SCT3030ALHRC11 is an N-channel SiCFET transistor that is ideal for use in electronic products that require high power dissipation.

  • Drain to Source Voltage: 650V
  • Continuous Drain Current: 70A (Tc) @ 25°C
  • Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 18V
  • Vgs(th) (Max) @ Id: 5.6V @ 13.3mA
  • Package: TO-247-3
  • Supplier Device Package: TO-247N
  • Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1526 pF @ 500 V
  • ECCN: EAR99
  • HTSUS: 8541.29.0095

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $84.0178 $84.0178
2+ $68.9377 $137.8754
3+ $66.7834 $200.3502
4+ $64.6291 $258.5164
5+ $62.4748 $312.3740
6+ $56.0119 $336.0714
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 113 pieces
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