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Same model may have multiple batches, images only for reference.
SCT3030KLHRC11 Real Image
Same model may have multiple batches, images only for reference.

SCT3030KLHRC11

Part No SCT3030KLHRC11
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
SCT3030KLHRC11 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Rohm Semiconductor
Series Automotive, AEC-Q101
Package Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 72A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 18V
Rds On (Max) @ Id, Vgs 39mOhm @ 27A, 18V
Vgs(th) (Max) @ Id 5.6V @ 13.3mA
Gate Charge (Qg) (Max) @ Vgs 131 nC @ 18 V
Vgs (Max) +22V, -4V
Input Capacitance (Ciss) (Max) @ Vds 2222 pF @ 800 V
Power Dissipation (Max) 339W
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247N
Package / Case TO-247-3
Base Product Number SCT3030
Standard Package 30
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278190-SCT3030KLHRC11
Ultra Librarian 3D Model Ultra Librarian SCT3030KLHRC11 CAD Model

Description

The SCT3030KLHRC11 is an N-channel SiCFET (Silicon Carbide) transistor from Rohm Semiconductor.

  • ECCN: EAR99
  • REACH: Unaffected
  • Suitable for: FETs, MOSFETs - Single applications in the automotive industry

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