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Same model may have multiple batches, images only for reference.
SH8M4TB1 Real Image
Same model may have multiple batches, images only for reference.

SH8M4TB1

Part No SH8M4TB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 9A/7A 8SOIC
Datasheet
SH8M4TB1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A, 7A
Maximum Rds On at Id,Vgs 18 mOhm @ 9A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 15nC @ 5V
Max Input Capacitance 1190pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 1095654-SH8M4TB1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SH8M4TB1 CAD Model

Description

The SH8M4TB1 N and P-Channel Logic Level Gate FET is a high-performance semiconductor product that is designed with a maximum power dissipation of 2W from Rohm Semiconductor.

  • Type: Discrete semiconductor product
  • Status: Not designed for new designs
  • Temperature Range: 150°C (TJ)
  • Mounting: SMD (SMT) technology
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 9A, 7A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate Charge: 15nC @ 5V
  • Maximum Input Capacitance: 1190pF @ 10V
  • Maximum Rds On @ Id, Vgs: 18 mOhm @ 9A, 10V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1181 $50.3145
110+ $0.9175 $100.9250
170+ $0.8888 $151.0960
235+ $0.8601 $202.1235
305+ $0.8315 $253.6075
405+ $0.7454 $301.8870
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,865 pieces
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