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Same model may have multiple batches, images only for reference.
RSS090P03FU7TB Real Image
Same model may have multiple batches, images only for reference.

RSS090P03FU7TB

Part No RSS090P03FU7TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 9A 8SOIC
Datasheet
RSS090P03FU7TB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 39nC @ 5V
Max Input Capacitance 4000pF @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2W (Ta)
Maximum Rds On at Id,Vgs 14 mOhm @ 9A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 184079-RSS090P03FU7TB
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian RSS090P03FU7TB CAD Model

Description

The Rohm Semiconductor RSS090P03FU7TB is a P-channel MOSFET that is designed to operate in a temperature range of 150°C.

  • Maximum Power Dissipation: 2W (Ta)
  • Package: 8-SOP
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 9A (Ta)
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate Charge: 39nC @ 5V
  • Maximum Input Capacitance: 4000pF @ 10V
  • Maximum Rds On @ Id,Vgs: 14 mOhm @ 9A, 10V
  • Category: discrete semiconductor product
  • Popularity: medium popularity
  • Supply and demand status: limited supply and demand status

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9+ $13.0838 $117.7542
14+ $12.6750 $177.4500
19+ $12.2661 $233.0559
25+ $11.8572 $296.4300
33+ $10.6306 $350.8098
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