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Same model may have multiple batches, images only for reference.
SH8M5TB1 Rohm Semiconductor
Same model may have multiple batches, images only for reference.

SH8M5TB1

Part No SH8M5TB1
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 6A/7A SOP8
Datasheet
SH8M5TB1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 6A, 7A
Maximum Rds On at Id,Vgs 30 mOhm @ 6A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 7.2nC @ 5V
Max Input Capacitance 520pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 1095655-SH8M5TB1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SH8M5TB1 CAD Model

Description

The SH8M5TB1 is an N and P-channel FET with a logic level gate manufactured by Rohm Semiconductor.

  • Use: discrete semiconductor products
  • Power Dissipation (Max): 2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 6A or 7A
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Mounting: 8-SOP package
  • Status: not for new designs
  • Popularity: medium

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