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Same model may have multiple batches, images only for reference.
SP8J5FU6TB Real Image
Same model may have multiple batches, images only for reference.

SP8J5FU6TB

Part No SP8J5FU6TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 7A 8SOIC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 7A
Maximum Rds On at Id,Vgs 28 mOhm @ 7A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 25nC @ 5V
Max Input Capacitance 2600pF @ 10V
Maximum Power Dissipation 2W
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 1101452-SP8J5FU6TB
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SP8J5FU6TB CAD Model

Description

The SP8J5FU6TB is a dual P-Channel logic level gate FET manufactured by Rohm Semiconductor.

  • Manufacturer: Rohm Semiconductor
  • Category: Discrete Semiconductor Products
  • Status: Not For New Designs
  • Case/Package: 8-SOP
  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 7A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Maximum Gate Charge: 25nC @ 5V
  • Maximum Input Capacitance: 2600pF @ 10V
  • Maximum Rds On at Id,Vgs: 28 mOhm @ 7A, 10V
  • Popularity: Medium
  • Supply and Demand: Balanced

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Quantity Unit Price Ext. Price
7+ $8.9732 $62.8124
16+ $7.3620 $117.7920
25+ $7.1321 $178.3025
34+ $6.9023 $234.6782
44+ $6.6724 $293.5856
58+ $5.9817 $346.9386
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