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Same model may have multiple batches, images only for reference.
SP8M3FU6TB Real Image
Same model may have multiple batches, images only for reference.

SP8M3FU6TB

Part No SP8M3FU6TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 5A/4.5A 8SOIC
Datasheet
SP8M3FU6TB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Not For New Designs
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 5A, 4.5A
Maximum Rds On at Id,Vgs 51 mOhm @ 5A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 5.5nC @ 5V
Max Input Capacitance 230pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 131742-SP8M3FU6TB
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian SP8M3FU6TB CAD Model

Description

This is a Rohm Semiconductor N and P-channel FET type with logic level gate.

  • Packaging: Reel - TR
  • Mounting: SMD (SMT)
  • Temperature Range - Operating: 150°C (TJ)
  • Case / Package: 8-SOP
  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 5A, 4.5A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Max Gate Charge: 5.5nC @ 5V
  • Max Input Capacitance: 230pF @ 10V
  • Maximum Rds On at Id,Vgs: 51 mOhm @ 5A, 10V

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210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
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775+ $0.4481 $347.2775
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