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SP8M9TB

Part No SP8M9TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 9A/5A 8SOIC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A, 5A
Maximum Rds On at Id,Vgs 18 mOhm @ 9A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 21nC @ 5V
Max Input Capacitance 1190pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 1101458-SP8M9TB
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SP8M9TB CAD Model

Description

This electronic component is a Discrete Semiconductor Product with a Win Source Part Number of 1101458-SP8M9TB, manufactured by Rohm Semiconductor.

  • Win Source Part Number: 1101458-SP8M9TB
  • Manufacturer: Rohm Semiconductor
  • Packaging: Reel - TR
  • Mounting Style: SMD (SMT)
  • Type: N and P-Channel FET
  • Gate Feature: Logic Level Gate
  • Status: Obsolete (EOL)
  • Temperature Range: 150°C (TJ)
  • Case/Package: 8-SOP
  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 9A, 5A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Max Gate Charge: 21nC @ 5V
  • Max Input Capacitance: 1190pF @ 10V
  • Maximum Rds On @ Id,Vgs: 18 mOhm @ 9A, 10V
  • Supply and Demand: Sufficient

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