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Same model may have multiple batches, images only for reference.
SP8M9TB Real Image
Same model may have multiple batches, images only for reference.

SP8M9TB

Part No SP8M9TB
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 30V 9A/5A 8SOIC
Datasheet
SP8M9TB Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Obsolete(EOL)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 9A, 5A
Maximum Rds On at Id,Vgs 18 mOhm @ 9A, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Gate Charge 21nC @ 5V
Max Input Capacitance 1190pF @ 10V
Maximum Power Dissipation 2W
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOP
Win Source Part Number 1101458-SP8M9TB
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SP8M9TB CAD Model

Description

This electronic component is a Discrete Semiconductor Product with a Win Source Part Number of 1101458-SP8M9TB, manufactured by Rohm Semiconductor.

  • Win Source Part Number: 1101458-SP8M9TB
  • Manufacturer: Rohm Semiconductor
  • Packaging: Reel - TR
  • Mounting Style: SMD (SMT)
  • Type: N and P-Channel FET
  • Gate Feature: Logic Level Gate
  • Status: Obsolete (EOL)
  • Temperature Range: 150°C (TJ)
  • Case/Package: 8-SOP
  • Maximum Power Dissipation: 2W
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 9A, 5A @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Max Gate Charge: 21nC @ 5V
  • Max Input Capacitance: 1190pF @ 10V
  • Maximum Rds On @ Id,Vgs: 18 mOhm @ 9A, 10V
  • Supply and Demand: Sufficient

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