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Same model may have multiple batches, images only for reference.
UM6J1NTN Rohm Semiconductor
Same model may have multiple batches, images only for reference.

UM6J1NTN

Part No UM6J1NTN
Manufacturer Rohm Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET 2P-CH 30V 0.2A UMT6
Datasheet
UM6J1NTN Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Rohm Semiconductor
Packaging Reel - TR
Status Active
FET Type 2 P-Channel (Dual)
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 200mA
Maximum Rds On at Id,Vgs 1.4 Ohm @ 200mA, 10V
Gate-Source Threshold Voltage 2.5V @ 1mA
Max Input Capacitance 30pF @ 10V
Maximum Power Dissipation 150mW
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package UMT6
Win Source Part Number 1116391-UM6J1NTN
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UM6J1NTN CAD Model

Description

The Rohm Semiconductor 1116391-UM6J1NTN is a dual P-channel FET with a logic level gate.

  • Channel Type: Dual P-channel
  • Gate Type: Logic Level
  • Category: Discrete Semiconductor Products
  • Power Dissipation: 150mW
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current: 200mA @ 25°C
  • Gate-Source Threshold Voltage: 2.5V @ 1mA
  • Rds On @ Id,Vgs: 1.4 Ohm @ 200mA and 10V
  • Package: UMT6
  • Operating Temperature: Up to 150°C
  • Input Capacitance: 30pF @ 10V
  • Availability: Win Source

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Pricing & Ordering

Quantity Unit Price Ext. Price
405+ $0.1248 $50.5440
860+ $0.1169 $100.5340
1,330+ $0.1130 $150.2900
1,905+ $0.1051 $200.2155
2,475+ $0.1011 $250.2225
3,090+ $0.0972 $300.3480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 240,000 pieces
MOQ: 405 pcs
Order Increment : 1 pcs
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