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P11NM60FP

Part No P11NM60FP
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 11A TO220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 30nC @ 10V
Max Input Capacitance 1000pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 450 mOhm @ 5.5A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 091727-P11NM60FP
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian P11NM60FP CAD Model

Description

STMicroelectronics P11NM60FP Power MOSFET

The P11NM60FP is a high-performance N-channel Power MOSFET produced by STMicroelectronics, renowned for its efficiency and reliability in a wide array of power management applications. This device is part of the MDmesh™ series, which utilizes an innovative vertical process technology to create power MOSFETs with extremely low on-resistance and high dv/dt capability, making them ideal for high-efficiency power supplies and converters.

With a drain-source voltage (V<sub>DS) of 600V, the P11NM60FP can handle significant voltage levels, making it suitable for high-voltage applications. Additionally, its continuous drain current (I<sub>D) is rated at 11A, providing ample current handling capability for a variety of demanding tasks. The device's low threshold voltage ensures that it can be driven at lower gate voltages, enhancing its versatility in different circuit designs.

The P11NM60FP's power dissipation is rated at 125W, which is indicative of its ability to handle high levels of power without compromising performance. Its total gate charge (Q<sub>g) is optimized to improve the switching performance which is crucial for reducing energy losses during power conversion processes. The MOSFET's high dv/dt rating ensures it can withstand fast voltage transients, providing robustness and reliability in circuits susceptible to voltage spikes.

Designed with an intrinsic fast-recovery body diode, the P11NM60FP minimizes reverse recovery time and charge, which is essential for improving the efficiency of applications such as switching power supplies and motor control systems. This feature also contributes to reduced electromagnetic interference (EMI), which can be critical in sensitive electronic equipment.

The P11NM60FP is housed in a TO-220FP package, which is widely used in the industry and known for its good thermal performance. This package allows for effective heat dissipation, ensuring the MOSFET operates within its specified temperature range even under high current conditions.

In summary, the P11NM60FP from STMicroelectronics is a robust and efficient solution for designers looking to improve power management in their electronic designs. Its combination of high voltage capability, substantial current handling, low on-resistance, and fast switching performance makes it an excellent choice for a wide range of applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
50+ $1.2513 $62.5650
115+ $1.0267 $118.0705
175+ $0.9946 $174.0550
240+ $0.9626 $231.0240
315+ $0.9305 $293.1075
420+ $0.8341 $350.3220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 100 pieces
MOQ: 50 pcs
Order Increment : 1 pcs
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