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P2NK60Z

Part No P2NK60Z
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 1.4A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 10nC @ 10V
Max Input Capacitance 170pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 8 Ohm @ 700mA, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 209570-P2NK60Z
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian P2NK60Z CAD Model

Description

The STMicroelectronics P2NK60Z is a robust and versatile N-channel Power MOSFET designed for high-performance switching applications. This MOSFET is part of STMicroelectronics' MDmesh™ series, which is renowned for its low on-resistance, high blocking voltage, and energy-efficient operation. The P2NK60Z is an ideal choice for a wide range of electronic circuits, including power supplies, motor controls, lighting systems, and other high-efficiency power management designs.

Key Features

  • High Voltage Capability: The P2NK60Z boasts a high drain-source breakdown voltage (V<sub>DS) of 600V, making it suitable for applications that require high voltage operation.
  • Low On-Resistance: With a low on-state resistance (R<sub>DS(on)), this MOSFET ensures minimal power loss during operation, leading to higher efficiency and lower heat generation.
  • Gate Charge Optimization: The optimized gate charge (Q<sub>g) allows for faster switching speeds, which is critical for reducing switching losses in power conversion systems.
  • High Current Capacity: The device is capable of handling continuous drain currents (I<sub>D), providing ample current for a variety of high-power applications.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche performance, ensuring reliability and robustness under harsh working conditions.

Applications

The P2NK60Z is suited for a diverse range of applications due to its high voltage and current handling capabilities. It can be commonly found in:

  • Switch Mode Power Supplies (SMPS)
  • DC-AC inverters for welding equipment or uninterruptible power supplies (UPS)
  • DC-DC converters
  • Power factor correction circuits
  • Motor control circuits
  • LED lighting solutions

Reliability and Performance

STMicroelectronics is known for its commitment to quality and reliability, and the P2NK60Z is no exception. This MOSFET is manufactured with state-of-the-art technology, ensuring that it meets the stringent requirements of industrial and consumer electronic products. With its robust thermal performance and long operational life, the P2NK60Z is designed to deliver consistent performance even in the most demanding environments.

For engineers and designers looking for a reliable and efficient power switching solution, the P2NK60Z from STMicroelectronics offers the perfect balance of performance, durability, and energy efficiency.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $4.9376 $59.2512
29+ $4.0517 $117.4993
45+ $3.9247 $176.6115
61+ $3.7988 $231.7268
79+ $3.6717 $290.0643
106+ $3.2918 $348.9308
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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