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P6NK50Z

Part No P6NK50Z
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 5.6A TO-220
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 50μA
Max Gate Charge 24.6nC @ 10V
Max Input Capacitance 690pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 90W (Tc)
Maximum Rds On at Id,Vgs 1.2 Ohm @ 2.8A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 061042-P6NK50Z
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian P6NK50Z CAD Model

Description

The P6NK50Z is a robust and reliable power MOSFET designed and manufactured by STMicroelectronics, a global semiconductor leader known for its innovative and high-quality electronic components. This particular product is part of ST's Power MOSFET portfolio and is specifically engineered to address the demanding needs of high-efficiency power management and switching applications.

Key Features

  • High RDS(on): The device offers a very low on-state resistance, which translates to reduced conduction losses and improved overall efficiency in power circuits.
  • High Avalanche Ruggedness: With its ability to withstand high-energy pulses in the avalanche and commutation modes, the P6NK50Z ensures reliability and durability in harsh conditions.
  • 100% Avalanche Tested: Each unit is tested for guaranteed performance in applications requiring ruggedness.

Applications

The P6NK50Z is versatile and can be used in a wide range of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • High Current Switching
  • Motor Control Systems
  • Power Inverters
  • DC-DC & AC-DC Converters

Technical Specifications

Parameter Value Drain-source Voltage (V<sub>DS) 500 V Continuous Drain Current (I<sub>D) 6 A Power Dissipation (P<sub>D) 70 W Operating Temperature Range -55 °C to +150 °C Package/Case TO-220

The P6NK50Z is a testament to STMicroelectronics' commitment to providing high-performance components that meet the stringent requirements of modern electronic systems. With its combination of efficiency, reliability, and versatility, this power MOSFET is an excellent choice for designers looking to optimize their power management solutions.

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