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Same model may have multiple batches, images only for reference.
IRFI744G Real Image
Same model may have multiple batches, images only for reference.

IRFI744G

Part No IRFI744G
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 450V 4.9A TO220FP
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 450V
Continuous Drain Current at 25°C 4.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 80nC @ 10V
Max Input Capacitance 1400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 40W (Tc)
Maximum Rds On at Id,Vgs 630 mOhm @ 2.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3 Full Pack, Isolated Tab
Win Source Part Number 123265-IRFI744G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFI744G CAD Model

Description

The IRFI744G is an N-Channel MOSFET transistor from Vishay.

  • Maximum Drain-Source Breakdown Voltage: 450V
  • Continuous Drain Current: 4.9A @ 25°C
  • Gate-Source Threshold Voltage: 4V @ 250μA
  • Maximum Gate Charge: 80nC @ 10V
  • Maximum Input Capacitance: 1400pF @ 25V
  • Maximum On-Resistance: 630 mOhm @ 2.9A and 10V gate-source voltage
  • Package: TO-220-3
  • Temperature Range: -55°C to 150°C

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