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STB22NM60N

Part No STB22NM60N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 16A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 100μA
Max Gate Charge 44nC @ 10V
Max Input Capacitance 1300pF @ 50V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 220 mOhm @ 8A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 005493-STB22NM60N
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB22NM60N CAD Model

Description

STB22NM60N - N-channel 600 V, 0.19 Ohm typ., 17 A MDmesh™ II Plus low Qg Power MOSFET in D2PAK package

The STB22NM60N is a high-performance N-channel Power MOSFET from STMicroelectronics, designed with the second generation of MDmesh™ technology, which combines the benefits of reduced on-resistance and fast switching with an innovative proprietary vertical structure. This device is particularly suitable for high efficiency applications, providing an excellent figure of merit (FOM) and low gate charge (Qg), which are critical parameters for reducing switching losses in power conversion systems.

Key Features

  • High Voltage Capability: With a drain-source voltage (VDS) rating of 600 V, the STB22NM60N can handle high voltage applications, making it ideal for primary side switching in AC/DC converters and for use in high-performance power supplies.
  • Low On-Resistance: The device boasts an on-resistance (RDS(on)) of only 0.19 Ohm typical, which means it has very low conduction losses and can handle significant current without overheating.
  • High Current Rating: With a continuous drain current (ID) of 17 A, this MOSFET can manage high current loads, providing robust performance for a wide range of applications.
  • Reduced Gate Charge: The low gate charge (Qg) improves the switching performance, which is essential for high-frequency power conversion systems, leading to increased efficiency and reduced switching losses.
  • 100% Avalanche Tested: Ensures reliable operation in extreme conditions, making it suitable for rugged applications.

Applications

The STB22NM60N is versatile and can be used in various applications, including switch mode power supplies (SMPS), LED lighting, high-efficiency DC/DC converters, solar inverters, and motor control circuits. Its robustness and efficiency also make it an excellent choice for industrial and automotive environments.

Package Information

This MOSFET is available in a D2PAK package, which is known for its ability to handle high thermal and electrical loads. The package is designed for surface mounting, which makes it easy to integrate into various circuit designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.6722 $60.4980
210+ $0.5521 $115.9410
325+ $0.5348 $173.8100
450+ $0.5174 $232.8300
580+ $0.5001 $290.0580
775+ $0.4481 $347.2775
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 16,600 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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