ON Semiconductor BD679G Power Transistor

The ON Semiconductor BD679G is a robust power transistor designed to deliver efficiency and reliability for a wide range of applications. This Darlington transistor is part of the medium-power transistor family, known for its high current gain and integrated suppression diodes for inductive loads. The BD679G is a perfect choice for designers looking for a component that can handle moderate power with ease.

Key Features:

• High Current Rating: Capable of conducting up to 4A of continuous collector current, making it suitable for handling higher current loads.
• High Collector-Emitter Voltage: With a V_CEO of 80V, it can be used in circuits with higher operating voltages.
• High DC Current Gain: Featuring a h_FE (DC current gain) of 750 (min) at 1.5A, it provides a significant amplification factor for the input signal.
• Monolithic Construction: The BD679G is built using a monolithic design, which ensures lower leakage currents and higher reliability.
• Complementary PNP Type: It has a complementary PNP partner, the BD680G, which allows for use in push-pull, or other complementary configurations.
• Thermal and Power Efficiency: Designed to maintain thermal stability, which enhances its power efficiency and longevity.

Applications:

The BD679G is versatile and can be used in a variety of applications, including:

• Power regulators
• DC-DC converters
• Power amplifiers
• Motor controllers
• Switching applications

Product Specifications:

With its high-performance characteristics, the ON Semiconductor BD679G is an excellent choice for applications demanding a high level of efficiency and power handling capability.