The STB23NM50N is a high-performance N-channel Power MOSFET presented by STMicroelectronics, a leader in advanced semiconductor solutions. This device is a part of the MDmesh™ II series, which is renowned for its excellent on-state resistance and switching performance. The MOSFET is encapsulated in a robust and compact D2PAK package, making it suitable for a wide range of power applications.

Key Features

• High Voltage Capability: With a drain-source voltage (V<sub>DS) of 500V, the STB23NM50N can efficiently manage high voltage operations, making it ideal for electronic equipment that requires high voltage thresholds.
• Low On-Resistance: The device offers a low on-state resistance (R<sub>DS(on)) of just 0.19Ω, which enhances its efficiency by minimizing conduction losses.
• High Current Rating: It can support a continuous drain current (I<sub>D) of up to 23A, allowing it to handle significant power levels in electronic circuits.
• Reduced Gate Charge: The MOSFET features a low gate charge (Q<sub>g), which contributes to reduced switching losses and improves overall performance in high-frequency applications.
• 100% Avalanche Tested: Ensures reliability and robustness by verifying the device's ability to withstand high-energy pulses in avalanche mode.

Applications

The STB23NM50N is versatile and can be used in a variety of applications, including:

• Switching applications
• Power supplies
• Motor control
• Power conversion systems
• Lighting solutions

Quality and Reliability

STMicroelectronics is committed to delivering high-quality and reliable components. The STB23NM50N MOSFET is designed and manufactured with the highest quality standards, ensuring that it meets the rigorous demands of industrial and consumer electronic products.