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STB6NK90ZT4

Part No STB6NK90ZT4
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 900V 5.8A D2PAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 900V
Continuous Drain Current at 25°C 5.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 100μA
Max Gate Charge 60.5nC @ 10V
Max Input Capacitance 1350pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 2 Ohm @ 2.9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 031085-STB6NK90ZT4
Family Name STB6NK90
Introduction Date November 28, 2002
ECCN EAR99
Country of Origin China
Halogen Free Not Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STB6NK90ZT4 CAD Model

Description

The STB6NK90ZT4 is a cutting-edge power MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its innovative and reliable components. This device is part of ST's MDmesh™ K5 series, which utilizes the latest advancements in high voltage technology to provide energy-efficient solutions for a wide range of applications.

Key Features

  • High Voltage Capability: The STB6NK90ZT4 is designed to withstand high voltages, with a V<sub>DS rating of 900V that makes it suitable for various power supply and conversion applications.
  • Low On-Resistance: With an R<sub>DS(on) value as low as 1.7 Ohm, this MOSFET ensures minimal power loss during operation, enhancing overall system efficiency.
  • Zener-Protected: The gate of this MOSFET is protected by an integrated Zener diode, safeguarding the device against electrostatic discharge (ESD) and providing enhanced reliability.
  • Reduced Gate Charge: The device features a low gate charge (Q<sub>g), which minimizes switching losses and allows for faster switching speeds, beneficial in high-frequency circuits.
  • Improved dv/dt Capability: The STB6NK90ZT4 can handle high dv/dt rates, ensuring stable operation under fast-switching conditions and transient voltage spikes.

Applications

The versatility of the STB6NK90ZT4 makes it an ideal choice for a variety of applications, including:

  • Switched-mode power supplies (SMPS)
  • LED lighting applications
  • High-efficiency DC/DC converters
  • Power factor correction (PFC) circuits
  • Electronic ballasts for fluorescent lighting
  • Motor control circuits

Package and Quality

The STB6NK90ZT4 is offered in a D2PAK package, known for its robust design and excellent thermal performance. The package is suitable for through-hole mounting, which is advantageous for applications requiring strong mechanical anchoring to the PCB. STMicroelectronics is committed to delivering high-quality products, and this MOSFET is no exception. It complies with the highest standards of quality and reliability, ensuring performance and durability for the most demanding electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1953 $53.7885
105+ $0.9808 $102.9840
160+ $0.9501 $152.0160
220+ $0.9195 $202.2900
285+ $0.8888 $253.3080
380+ $0.7969 $302.8220
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 145,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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