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STD36NH02L

Part No STD36NH02L
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 24V 30A DPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 24V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 860pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 14.5 mOhm @ 15A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D-Pak
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 031137-STD36NH02L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STD36NH02L CAD Model

Description

STMicroelectronics STD36NH02L N-Channel MOSFET

The STD36NH02L is a high-performance N-Channel MOSFET brought to you by STMicroelectronics, a global semiconductor leader known for its cutting-edge technology. This power MOSFET is designed to meet the rigorous demands of a variety of applications, including switch-mode power supplies, DC-DC converters, motor control circuits, and general-purpose switching applications.

With an optimal trade-off between on-resistance and gate charge, the STD36NH02L ensures high efficiency in power conversion, which is critical for energy-saving applications. Its low threshold drive makes it suitable for low voltage applications, providing a great degree of flexibility for designers.

The STD36NH02L features advanced STripFET™ II technology, which enables the device to achieve an excellent figure of merit and low on-state resistance, R<sub>DS(on). This technology provides improved current handling capabilities compared to traditional MOSFETs, allowing for higher current density and reduced power losses.

Key specifications of the STD36NH02L include:

  • Drain-source voltage (V<sub>DS): 24V
  • Continuous drain current (I<sub>D): 30A
  • Pulse drain current (I<sub>DM): 120A
  • Power dissipation (P<sub>D): 48W
  • Low threshold voltage (V<sub>GS(th))
  • Low gate charge (Q<sub>g)
  • Low input capacitance (C<sub>iss)

The device is housed in a surface-mount DPAK package, which not only offers a compact footprint but also ensures good thermal performance. Its robust design is capable of withstanding harsh environments, which is crucial for industrial and automotive applications.

For applications requiring precise control, the STD36NH02L's fast switching speed is a significant advantage, enabling efficient operation at high frequencies. This, combined with its ruggedness and reliability, makes the STD36NH02L an excellent choice for designers looking to enhance system performance while maintaining cost-effectiveness.

Overall, the STD36NH02L from STMicroelectronics represents a blend of performance, efficiency, and reliability, making it an ideal component for power management solutions in a wide range of electronic devices.

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Pricing & Ordering

Quantity Unit Price Ext. Price
370+ $0.1564 $57.8680
905+ $0.1284 $116.2020
1,395+ $0.1244 $173.5380
1,920+ $0.1204 $231.1680
2,485+ $0.1163 $289.0055
3,325+ $0.1043 $346.7975
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 37,500 pieces
MOQ: 370 pcs
Order Increment : 1 pcs
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