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STD6NM60N-1

Part No STD6NM60N-1
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 4.6A IPAK
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 420pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 45W (Tc)
Maximum Rds On at Id,Vgs 920 mOhm @ 2.3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I-Pak
Dimension TO-251-3 Short Leads, IPak, TO-251AA
Win Source Part Number 066325-STD6NM60N-1
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STD6NM60N-1 CAD Model

Description

STD6NM60N-1 Power MOSFET by STMicroelectronics

The STD6NM60N-1 is a robust and efficient N-channel Power MOSFET designed and manufactured by STMicroelectronics, a global leader in semiconductor solutions. This high-performance MOSFET is part of ST's MDmesh™ M6 series, which is renowned for its excellent energy efficiency and low on-resistance. The device is suitable for a wide range of applications, including switch-mode power supplies (SMPS), lighting, DC-DC converters, and motor control circuits.

With a drain-source voltage (V<sub>DS) of 600V, the STD6NM60N-1 is capable of handling high voltages, making it an ideal choice for systems that require reliable performance under stressful conditions. The MOSFET also boasts a low gate charge (Q<sub>g), which facilitates faster switching speeds and minimizes switching losses. This feature, combined with the device's low on-resistance (R<sub>DS(on)), significantly enhances the overall efficiency of the applications in which it is used.

The STD6NM60N-1 incorporates STMicroelectronics' state-of-the-art MDmesh™ technology, which utilizes a proprietary vertical structure. This technology enables the reduction of conduction losses while maintaining a high level of reliability and ruggedness. Additionally, the device's Zener-protected gate makes it resilient against electrostatic discharge (ESD) events, ensuring a longer operational life and stability in sensitive environments.

The packaging of the STD6NM60N-1 is designed to be compact yet durable, with a surface-mount DPAK (TO-252) package that allows for efficient heat dissipation and space-saving on printed circuit boards (PCBs). This makes the MOSFET an excellent choice for designs where space is at a premium without compromising on thermal performance.

In summary, the STD6NM60N-1 from STMicroelectronics is a powerful and reliable component that offers an optimal balance between high voltage capability, fast switching performance, and energy efficiency. Its advanced features and robust design make it a versatile solution for engineers looking to improve the performance and reliability of their power management systems.

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