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STD888T4-E

Part No STD888T4-E
Manufacturer STMicroelectronics
Catalog Transistors (BJT) - Single
Sample
Rohs State rohs
ECAD Module
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Manufacturer STMicroelectronics
Category Discrete Semiconductor Products
Family Transistors(BJT) - Single
Win Source Part Number 194364-STD888T4-E
Popularity Low
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STD888T4-E CAD Model

Description

STMicroelectronics Product Overview: STD888T4-E

The STD888T4-E is a state-of-the-art power MOSFET from STMicroelectronics, designed to deliver high performance and efficiency in a wide range of applications. This device is part of ST's STripFET™ VII DeepGATE™ technology, which is renowned for providing excellent on-state resistance (R<sub>DS(on)) and superior switching performance.

Key Features

  • Low Threshold Drive: The STD888T4-E can be easily driven at low voltages, making it suitable for low-power applications and ensuring compatibility with modern microcontrollers and logic-level devices.
  • High Switching Efficiency: With DeepGATE™ technology, this MOSFET achieves fast switching speeds, which contributes to reduced switching losses and improved overall efficiency.
  • Reduced On-State Resistance: The device boasts an exceptionally low R<sub>DS(on), which minimizes conduction losses and helps in achieving higher energy efficiency.
  • Robust Thermal Performance: The STD888T4-E is encapsulated in a surface-mount DPAK package that offers excellent thermal dissipation, ensuring reliable performance even under high current conditions.

Applications

The versatility of the STD888T4-E allows it to be employed in a multitude of applications, ranging from power management solutions to high-efficiency power supplies. It is particularly well-suited for:

  • DC-DC converters
  • Motor control circuits
  • Load switches
  • Power management in portable devices
  • Automotive applications

Technical Specifications

The STD888T4-E operates with a continuous drain current of up to 80A, making it capable of handling high current loads. It has a maximum drain-source voltage (V<sub>DS) of 40V, which allows for a wide range of operation in various circuit designs. The threshold voltage (V<sub>GS(th)) is specified at a typical value of 2.1V, providing a low gate drive requirement.

Quality and Reliability

STMicroelectronics is committed to delivering high-quality products. The STD888T4-E is manufactured with rigorous standards, ensuring its reliability and longevity in demanding environments. Its compliance with RoHS directives also makes it an environmentally friendly choice for modern electronic designs.

For designers looking for a robust, efficient, and reliable power MOSFET solution, the STD888T4-E from STMicroelectronics is an excellent choice that combines performance with practicality.

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Pricing & Ordering

Quantity Unit Price Ext. Price
85+ $0.6907 $58.7095
205+ $0.5671 $116.2555
320+ $0.5498 $175.9360
435+ $0.5313 $231.1155
565+ $0.5140 $290.4100
755+ $0.4608 $347.9040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 3,000 pieces
MOQ: 85 pcs
Order Increment : 1 pcs
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