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STF9NM50N

Part No STF9NM50N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 7.5A TO-220FP
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 20nC @ 10V
Max Input Capacitance 570pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 25W (Tc)
Maximum Rds On at Id,Vgs 560 mOhm @ 3.7A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220FP
Dimension TO-220-3 Full Pack
Win Source Part Number 066366-STF9NM50N
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STF9NM50N CAD Model

Description

STF9NM50N - N-channel 500 V, 0.88 Ω typ., 7 A MDmesh™ II Plus Low Qg Power MOSFET

The STF9NM50N is a high-performance N-channel Power MOSFET produced by STMicroelectronics, utilizing their advanced MDmesh™ II Plus technology. The device is designed to meet the rigorous demands of power efficiency and energy savings in a wide array of applications, including switch-mode power supplies (SMPS), lighting, welding, and high-performance drives.

This MOSFET features a drain-source voltage (V<sub>DS) of 500 V, which provides a robust margin for high-voltage applications. Its low on-resistance (R<sub>DS(on)) of typically 0.88 Ω ensures minimal power loss and promotes higher efficiency during operation. Additionally, the STF9NM50N boasts a continuous drain current (I<sub>D) of 7 A, allowing it to handle significant power levels.

One of the key advantages of the STF9NM50N is its Low Gate Charge (Q<sub>g), which enhances the switching performance of the MOSFET. This feature is particularly beneficial for applications that require fast switching frequencies, thereby reducing switching losses and improving overall system efficiency.

The device is packaged in a TO-220FP, which provides a good balance between thermal performance and board space utilization. The package is designed to be easily integrated into various circuit designs, offering flexibility for designers.

The STF9NM50N also incorporates Zener-protection, which provides enhanced robustness against voltage transients and ensures reliable operation under harsh conditions. This built-in protection helps to extend the lifespan of the MOSFET and the overall reliability of the system it is used in.

STMicroelectronics has a commitment to environmental sustainability, and the STF9NM50N is no exception. It complies with the European Union directives on the restriction of hazardous substances (RoHS), making it an environmentally friendly choice for power management solutions.

In summary, the STF9NM50N from STMicroelectronics is a powerful and efficient solution for high-voltage applications requiring low on-resistance, fast switching, and reliable performance. Its advanced features and robust package make it an ideal choice for designers looking to optimize their power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
24+ $2.4428 $58.6272
58+ $2.0039 $116.2262
90+ $1.9416 $174.7440
123+ $1.8792 $231.1416
159+ $1.8168 $288.8712
213+ $1.6286 $346.8918
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 7,000 pieces
MOQ: 24 pcs
Order Increment : 1 pcs
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