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STL38N65M5

Part No STL38N65M5
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 22.5A PWRFLAT8X
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 3.5A (Ta), 22.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 71nC @ 10V
Max Input Capacitance 3000pF @ 100V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.8W (Ta), 150W (Tc)
Maximum Rds On at Id,Vgs 105 mOhm @ 12.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerFlat (8x8) HV
Dimension 4-PowerFlat HV
Win Source Part Number 1005260-STL38N65M5
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STL38N65M5 CAD Model

Description

STL38N65M5 - STMicroelectronics

The STL38N65M5 is a high-performance, N-channel MDmesh™ V Power MOSFET designed and manufactured by STMicroelectronics. This advanced MOSFET is part of ST's innovative MDmesh series, which is renowned for its excellent energy efficiency and thermal performance. The STL38N65M5 is particularly well-suited for a wide range of high-power applications, including but not limited to switched-mode power supplies (SMPS), LED lighting solutions, high-efficiency converters, and power management tasks in computing and telecom systems.

With a maximum drain-source voltage (V<sub>DS) of 650V, the STL38N65M5 is capable of handling high voltage applications with ease. The device also features a low on-resistance (R<sub>DS(on)) of just 0.036 Ohms, which minimizes conduction losses and enhances overall efficiency. The low threshold voltage ensures that the MOSFET can be driven at lower gate voltages, further reducing power consumption.

The STL38N65M5 employs STMicroelectronics' revolutionary MDmesh technology, which combines a vertical structure with a proprietary strip layout to achieve extremely low on-resistance and reduced gate charge. These characteristics lead to reduced switching losses and better performance in resonant and hard-switching topologies. The device also boasts a fast recovery diode, which is crucial for high-speed switching operations.

Another significant advantage of the STL38N65M5 is its robustness. The MOSFET is designed to withstand high energy pulses in avalanche and commutation modes, making it highly reliable in demanding situations. Its high dv/dt capability ensures stable operation even under harsh switching conditions or when exposed to large voltage transients.

For ease of integration, the STL38N65M5 is available in multiple package options, including the TO-220, TO-220FP, TO-247, and D2PAK. These packages are not only designed for optimal electrical performance but also for excellent thermal management, ensuring the device operates within its specified temperature range even at high currents.

In summary, the STL38N65M5 from STMicroelectronics represents a state-of-the-art solution for designers looking to enhance the efficiency, reliability, and performance of their power conversion systems. With its advanced MDmesh technology and robust design, this MOSFET is a prime choice for modern high-voltage applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $5.6283 $61.9113
26+ $4.6182 $120.0732
39+ $4.4739 $174.4821
54+ $4.3296 $233.7984
69+ $4.1853 $288.7857
93+ $3.7523 $348.9639
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Availability: 1,925 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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