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STP08IE120F4

Part No STP08IE120F4
Manufacturer STMicroelectronics
Catalog Transistors - Special Purpose
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Special Purpose
Mfr STMicroelectronics
Series ESBT®
Package Tube
Product Status Obsolete
Transistor Type NPN - Emitter Switched Bipolar
Applications Gate Driver
Voltage - Rated 1200V (1.2kV)
Current Rating (Amps) 8A
Mounting Type Through Hole
Package / Case TO-220-4 Full Pack
Supplier Device Package TO-220FP
Base Product Number STP08I
Standard Package 50
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1277319-STP08IE120F4
Ultra Librarian 3D Model Ultra Librarian STP08IE120F4 CAD Model

Description

STP08IE120F4 - Power MOSFET from STMicroelectronics

The STP08IE120F4 is a robust and efficient Power MOSFET designed by STMicroelectronics, one of the leading companies in semiconductor solutions. This particular MOSFET is part of the STPOWER family, which is renowned for its high performance in power electronics applications. The device is tailored for applications that demand high-speed switching and energy efficiency, making it an ideal choice for a wide range of power management tasks.

With its advanced silicon technology, the STP08IE120F4 offers a drain-source voltage (V<sub>DS) of 1200V, which ensures that the device can handle high voltage applications with ease. The MOSFET is characterized by a low on-state resistance (R<sub>DS(on)) of just 0.8 Ohms, contributing to its excellent efficiency by minimizing conduction losses when the MOSFET is turned on.

The continuous drain current (I<sub>D) rating of 8A at 25°C allows for a significant amount of current to flow through the device, making it suitable for heavy-duty operations. Additionally, the STP08IE120F4 boasts a fast switching speed, which is crucial for reducing switching losses, especially in high-frequency power converters and inverters.

One of the key features of this Power MOSFET is its enhanced avalanche ruggedness, which provides reliable operation even under harsh conditions where the device might be subjected to high-energy pulses. This makes the STP08IE120F4 particularly valuable in applications such as switch-mode power supplies, motor drives, and other power conversion systems that require a high level of reliability and durability.

The STP08IE120F4 comes in a TO-220 package, which is a widely used and easily mountable form factor, providing good thermal performance and compatibility with various types of circuit boards. The package is designed to facilitate efficient heat dissipation, ensuring the MOSFET operates within its thermal limits even under high load conditions.

In summary, the STP08IE120F4 Power MOSFET from STMicroelectronics is an excellent choice for designers looking for a high-voltage, high-efficiency, and rugged solution for their power management and conversion applications. Its combination of high-speed switching, low on-resistance, and robustness makes it a versatile component in the field of power electronics.

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