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STP15NM65N

Part No STP15NM65N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 12A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 33.3nC @ 10V
Max Input Capacitance 983pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 054254-STP15NM65N
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP15NM65N CAD Model

Description

STP15NM65N Power MOSFET by STMicroelectronics

The STP15NM65N is a high-performance N-channel Power MOSFET presented by STMicroelectronics, a leader in the semiconductor industry. This state-of-the-art component is designed to deliver efficiency and reliability for a wide range of applications, including switch-mode power supplies, motor control systems, and power management solutions.

Key Features

  • Voltage Rating: The STP15NM65N boasts a robust 650V drain-source voltage (V<sub>DS), making it suitable for high-voltage applications.
  • Current Handling: It has a continuous drain current (I<sub>D) of 15A at 25°C, providing ample current handling capability for various power needs.
  • Low On-Resistance: With a typical on-resistance (R<sub>DS(on)) of just 0.19Ω, this MOSFET ensures minimal conduction losses and improved efficiency.
  • Fast Switching: The device is engineered for fast switching performance, which is critical for reducing switching losses in power conversion applications.
  • High Avalanche Ruggedness: It is designed to withstand high energy pulses in the avalanche and commutation modes, enhancing its durability and reliability under stress.

Advanced Technology

The STP15NM65N incorporates STMicroelectronics' advanced MDmesh™ technology, which combines a vertical structure with a patented strip layout to achieve extremely low on-resistance and gate charge. These features result in a highly efficient, low-power consumption device that is optimized for high-performance switching applications.

Applications

Due to its robust electrical characteristics, the STP15NM65N is an excellent choice for a variety of electronic applications, including:

  • LED lighting systems
  • Uninterruptible power supplies (UPS)
  • High-efficiency DC/DC converters
  • Solar inverters
  • Welding equipment

Package and Quality

The MOSFET is available in a TO-220 package, which is widely used and favored for its ease of installation and excellent thermal performance. STMicroelectronics is committed to delivering high-quality products, and the STP15NM65N is no exception, meeting rigorous standards for performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
20+ $3.0261 $60.5220
47+ $2.4833 $116.7151
73+ $2.4059 $175.6307
100+ $2.3285 $232.8500
129+ $2.2511 $290.3919
172+ $2.0178 $347.0616
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 20 pcs
Order Increment : 1 pcs
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