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STP160N3LL

Part No STP160N3LL
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 120A TO-220AB
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 42nC @ 4.5V
Max Input Capacitance 3500pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 136W (Tc)
Maximum Rds On at Id,Vgs 3.2 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 1103637-STP160N3LL
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STP160N3LL CAD Model

Description

The STP160N3LL is a highly efficient N-channel Power MOSFET produced by STMicroelectronics, utilizing the advanced STripFET™ III technology to achieve industry-leading performance. This device is specifically designed to offer a perfect balance between low on-resistance (R<sub>DS(on)) and low gate charge, making it an ideal choice for high-efficiency power management applications.

With a drain-source voltage (V<sub>DS) of 30 V, it is particularly suitable for systems operating at nominal voltages of 12V or 24V, such as automotive systems, DC-DC converters, and motor control circuits. The STP160N3LL boasts an extremely low typical on-resistance of just 0.0016 ohms, which contributes significantly to reducing conduction losses and improving overall system efficiency.

With a continuous drain current (I<sub>D) rating of 120 A at 25°C, this MOSFET can handle high current loads, making it an excellent choice for high-power applications. The device's low threshold voltage ensures that it can be driven at low gate voltages, which is beneficial for low-voltage drive circuits and helps to minimize power consumption during operation.

The STP160N3LL is housed in a TO-220 package, which is widely used and recognized for its robustness and excellent thermal performance. This package allows for efficient heat dissipation, ensuring the MOSFET operates within its safe temperature range even under high current operation or in high ambient temperature environments.

Key features of the STP160N3LL include its 100% avalanche tested design, which guarantees reliable operation under extreme conditions, and its Zener-protected gate, which provides enhanced protection against overvoltage transients. This makes the STP160N3LL a highly reliable component for demanding applications.

Overall, the STP160N3LL is a testament to STMicroelectronics' commitment to providing high-performance, energy-efficient power solutions. Whether for automotive electronics, power supply units, or high-performance computing, the STP160N3LL is designed to meet the rigorous demands of modern electronic systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
55+ $0.9571 $52.6405
115+ $0.8954 $102.9710
175+ $0.8645 $151.2875
250+ $0.8028 $200.7000
325+ $0.7719 $250.8675
405+ $0.7410 $300.1050
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 34,250 pieces
MOQ: 55 pcs
Order Increment : 1 pcs
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