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STP16NS25

Part No STP16NS25
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 250V 16A TO-220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 250V
Continuous Drain Current at 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 83nC @ 10V
Max Input Capacitance 1270pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 140W (Tc)
Maximum Rds On at Id,Vgs 280 mOhm @ 8A, 10V
Temperature Range - Operating -65°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-220AB
Dimension TO-220-3
Win Source Part Number 129729-STP16NS25
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian STP16NS25 CAD Model

Description

STP16NS25 - N-channel 250V - 0.16Ω - 16A - TO-220/TO-220FP Power MOSFET

The STP16NS25 is a robust and efficient N-channel Power MOSFET designed and manufactured by the reputable semiconductor company, STMicroelectronics. This Power MOSFET is part of STMicroelectronics' STripFET™ II series, which is known for its low on-resistance and low gate charge, making it an excellent choice for high-performance applications that require efficient power management.

This particular MOSFET, with its 250V drain-source voltage (V<sub>DS), is well-suited for a variety of applications, including switch-mode power supplies (SMPS), DC-AC converters, motor control circuits, and high-efficiency switching applications. The device's 0.16Ω on-resistance (R<sub>DS(on)) ensures minimal power loss during operation, contributing to the overall efficiency of the system it is integrated into.

The STP16NS25 can handle a continuous drain current of up to 16A, making it capable of driving significant loads. The device is available in both TO-220 and TO-220FP packages, offering flexibility for different mounting and heat-sinking requirements. The TO-220 package is widely used and is preferred for its ease of handling and excellent thermal performance, while the TO-220FP package is a slimmer option that is useful when space is at a premium.

Key features of the STP16NS25 include:

  • Low threshold drive
  • Low input capacitance and gate charge
  • 100% avalanche tested
  • High avalanche ruggedness

These features make the STP16NS25 an ideal choice for designers looking for a MOSFET that offers a balance between performance and reliability. Additionally, the device is 100% avalanche tested, ensuring that it can withstand tough conditions without failing. Its high avalanche ruggedness makes it suitable for applications that may experience unexpected voltage spikes.

Overall, the STP16NS25 from STMicroelectronics is a high-performance, reliable, and versatile N-channel Power MOSFET that can be used in a wide range of power management applications. Its combination of low on-resistance, high current handling, and robustness makes it an excellent choice for engineers and designers looking to optimize their power systems for efficiency and durability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
115+ $0.4374 $50.3010
280+ $0.3589 $100.4920
435+ $0.3477 $151.2495
595+ $0.3365 $200.2175
770+ $0.3253 $250.4810
1,030+ $0.2916 $300.3480
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 490 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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