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STP34NM60ND

Part No STP34NM60ND
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 600V 29A TO-220AB
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 29A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5V @ 250μA
Max Gate Charge 80.4nC @ 10V
Max Input Capacitance 2785pF @ 50V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 190W (Tc)
Maximum Rds On at Id,Vgs 110 mOhm @ 14.5A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-220
Dimension TO-220-3
Win Source Part Number 053930-STP34NM60ND
Popularity Medium
Supply and Demand Status Limited
Quantity per package 50
Ultra Librarian 3D Model Ultra Librarian STP34NM60ND CAD Model

Description

STP34NM60ND Power MOSFET by STMicroelectronics

The STP34NM60ND is a high-performance N-channel Power MOSFET produced by STMicroelectronics, a leader in semiconductor solutions. This power MOSFET is designed using ST's advanced MDmesh™ technology, which combines a vertical structure with the company's proprietary strip layout to yield one of the industry's lowest on-resistance and gate charge. These features make the STP34NM60ND an excellent choice for high-efficiency applications.

Key Features:

  • Low Threshold Drive: The device can be driven at lower gate voltages, making it compatible with a wide range of drive circuits and ensuring ease of use in various applications.
  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of 600V, the STP34NM60ND is suitable for high voltage applications, ensuring reliability and robustness in demanding environments.
  • Low On-Resistance: The MOSFET features a very low on-state resistance (R<sub>DS(on)), which reduces conduction losses and improves overall efficiency, especially in high current applications.
  • Reduced Gate Charge (Q<sub>g): The optimized gate charge allows for faster switching speeds, which is crucial for applications where efficiency and power density are of paramount importance.
  • 100% Avalanche Tested: Each device is guaranteed to withstand repetitive avalanche events, ensuring reliability and a longer lifespan.

Applications:

The STP34NM60ND is versatile and can be used in a wide array of applications, including but not limited to:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting Applications
  • High-Efficiency DC/DC Converters
  • Motor Control Circuits
  • Power Management Solutions

With its combination of low power dissipation, high efficiency, and robust performance, the STP34NM60ND from STMicroelectronics stands out as a superior choice for designers looking to optimize their power management systems. Its advanced features enable the development of more compact, energy-efficient, and reliable designs for a wide range of industrial and consumer applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.3690 $53.6900
23+ $4.4053 $101.3219
36+ $4.2676 $153.6336
49+ $4.1300 $202.3700
63+ $3.9923 $251.5149
84+ $3.5793 $300.6612
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,560 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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