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STP35N65DM2

Part No STP35N65DM2
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 32A TO220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Estimated Pruduction Lead Time 37 Weeks
Features N-Channel 650 V 32A (Tc) 250W (Tc) Through Hole TO-220
Manufacturer STMicroelectronics
Series MDmesh™ DM2
Package Tube
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Through Hole
Package TO-220-3
Case / Package TO-220
Family Name STP35
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Quantity per package 1000
Popularity High
Supply and Demand Status Balance
Win Source Part Number 898325-STP35N65DM2
Ultra Librarian 3D Model Ultra Librarian STP35N65DM2 CAD Model

Description

STP35N65DM2 - High Performance Power MOSFET by STMicroelectronics

The STP35N65DM2 is a cutting-edge power MOSFET device engineered by STMicroelectronics, a global semiconductor leader known for its innovative and reliable components. This particular MOSFET belongs to ST's MDmesh™ DM2 series, which is renowned for its outstanding efficiency and thermal performance. The STP35N65DM2 is designed to meet the demanding requirements of high-power applications, making it an ideal choice for a wide range of electronic circuits and systems.

Key Features:

  • Low On-Resistance (R<sub>DS(on)): The device boasts a low on-resistance, which translates into reduced conduction losses and enhances overall efficiency.
  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of 650V, the STP35N65DM2 can handle high voltage applications with ease, providing a wide safety margin for electrical designs.
  • High Current Rating: The MOSFET is capable of supporting a continuous drain current (I<sub>D) of 35A, making it suitable for high-power applications.
  • Fast Switching Speed: The fast switching characteristics of the STP35N65DM2 help in reducing switching losses and improving the performance in high-frequency operations.
  • Improved Ruggedness: This device is engineered for enhanced ruggedness, ensuring reliability and stability even under harsh operating conditions.
  • Low Gate Charge (Q<sub>g): The MOSFET has a low gate charge, which reduces the power required to switch the device on and off, further improving the efficiency.

Applications:

The STP35N65DM2 is versatile and can be used in a variety of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting Solutions
  • High-Performance Computing Systems
  • Uninterruptible Power Supplies (UPS)
  • Solar Power Inverters
  • Industrial Power Management Systems

Package and Quality:

Encased in a TO-220 package, the STP35N65DM2 ensures a robust and durable construction that is suitable for through-hole mounting, making it easy to integrate into various circuit designs. STMicroelectronics is committed to delivering high-quality products, and the STP35N65DM2 is no exception. It adheres to stringent quality control standards, ensuring reliable performance for the end-user.

With its impressive electrical characteristics and adaptability, the STP35N65DM2 from STMicroelectronics stands out as a top choice for designers looking to improve the efficiency and reliability of their power management systems.

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Pricing & Ordering

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11+ $6.0977 $67.0747
26+ $5.0033 $130.0858
41+ $4.8469 $198.7229
56+ $4.6906 $262.6736
72+ $4.5342 $326.4624
96+ $4.0652 $390.2592
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Availability: 4,283 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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