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STW13NM60N

Part No STW13NM60N
Manufacturer STMicroelectronics
Catalog Transistors - FETs, MOSFETs - RF
Description N-channel 600 V, 0.28 ohm typ., 11 A MDmesh II Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247 packages
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Series MDmesh II
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 600V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 30nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 790pF @ 50V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 90W (Tc)
Rds On (Maximum) @ Id, Vgs 360 mOhm @ 5.5A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247-3
Package TO-247-3
Win Source Part Number 1262340-STW13NM60N
Manufacturer Homepage www.st.com
Popularity Medium
Supply and Demand Status Balance
Family Name STW13NM60N
ECCN EAR99
Country of Origin China, India, Malaysia, Morocco, Philippines, Republic of Korea, Singapore
Halogen Free Compliant
Estimated EOL Date Obsolete
Ultra Librarian 3D Model Ultra Librarian STW13NM60N CAD Model

Description

STW13NM60N Power MOSFET Overview

The STW13NM60N is a high-performance Power MOSFET produced by STMicroelectronics, a global semiconductor leader known for its cutting-edge technology. This particular MOSFET is part of the MDmesh™ series, which is renowned for its excellent energy efficiency and reduced on-resistance. The STW13NM60N is designed to cater to a wide range of applications, including switch-mode power supplies (SMPS), lighting, welding, and high-performance drives.

Key Features

  • Advanced Technology: The STW13NM60N employs STMicroelectronics' innovative MDmesh™ technology, which combines a vertical structure with a proprietary strip layout to achieve outstanding on-resistance and high-speed switching performance.
  • High Voltage Capability: This MOSFET can handle high voltages, with a drain-source voltage (V<sub>DS) of 600V, making it suitable for applications that require high voltage operations.
  • Low On-Resistance: With a typical on-resistance (R<sub>DS(on)) of just 0.29Ω, this device ensures minimal power loss during operation, enhancing overall efficiency.
  • High Current Capacity: It supports a continuous drain current (I<sub>D) of up to 11A, making it capable of handling high current loads.
  • Reduced Gate Charge: A low gate charge (Q<sub>g) reduces the power required to turn the MOSFET on and off, which in turn minimizes switching losses.
  • 100% Avalanche Tested: This product is guaranteed to withstand rugged operating conditions, as each unit is thoroughly tested for avalanche ruggedness.
  • Compliance: The STW13NM60N is compliant with the RoHS directive and is free from environmentally hazardous substances.

Applications

The versatility of the STW13NM60N MOSFET makes it an ideal choice for a broad range of power applications. It is particularly well-suited for:

  • High-efficiency switch-mode power supplies (SMPS)
  • Power factor correction circuits (PFC)
  • Electronic ballasts for lighting
  • DC-AC inverters for solar energy systems
  • Motor control and drives
  • Uninterruptible power supplies (UPS)

With its robust design and state-of-the-art technology, the STW13NM60N is a reliable and efficient solution for designers looking to improve power performance in their applications.

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