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TSM085N03PQ33 RGG

Part No TSM085N03PQ33 RGG
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET, SINGLE, N-CHANNEL, TRENC
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Taiwan Semiconductor
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 52A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.5V @ 250μA
Max Gate Charge 14.3nC @ 10V
Max Input Capacitance 817pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 37W (Tc)
Maximum Rds On at Id,Vgs 8.5 mOhm @ 13A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-PDFN (3x3)
Dimension 8-PowerWDFN
Win Source Part Number 1114683-TSM085N03PQ33 RGG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TSM085N03PQ33 RGG CAD Model

Description

The TSM085N03PQ33 RGG is an N-channel MOSFET that is widely used in various electronic devices.

  • Manufacturer: Taiwan Semiconductor
  • Popularity: Medium
  • Description: High-quality component that provides excellent performance and reliability.

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Pricing & Ordering

Quantity Unit Price Ext. Price
180+ $0.3264 $58.7520
435+ $0.2679 $116.5365
670+ $0.2596 $173.9320
920+ $0.2511 $231.0120
1,190+ $0.2428 $288.9320
1,595+ $0.2176 $347.0720
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,200 pieces
MOQ: 180 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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