The TSM2NB60CP ROG is a N-Channel MOSFET designed and manufactured by Taiwan Semiconductor.

• Category: Discrete Semiconductor Products
• Power Dissipation: 44W (Tc)
• Drain-Source Breakdown Voltage: 600V
• Continuous Drain Current at 25°C: 2A (Tc)
• Gate-Source Threshold Voltage: 4.5V @ 250μA
• Maximum Rds On at Id,Vgs: 4.4 Ohm @ 1A, 10V
• Case/Package: TO-252, (D-Pak)
• Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
• Maximum Gate-Source Voltage: ±30V
• Maximum Gate Charge: 9.4nC @ 10V
• Max Input Capacitance: 249pF @ 25V
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Supply and Demand Status: balanced
• Quantity per Package: 2,500