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TSM4NB65CH

Part No TSM4NB65CH
Manufacturer Taiwan Semiconductor
Catalog Transistors - FETs, MOSFETs - RF
Description 650V, 4A, SINGLE N-CHANNEL POWER
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Taiwan Semiconductor
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 3.37Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13.46 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 549 pF @ 25 V
Power Dissipation (Max) 50W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-251 (IPAK)
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Base Product Number TSM4
Standard Package 15,000 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 841111-TSM4NB65CH
Ultra Librarian 3D Model Ultra Librarian TSM4NB65CH CAD Model

Description

The 841111-TSM4NB65CH is an N-Channel MOSFET transistor designed for high voltage applications.

  • Drain to Source Voltage: 650V
  • Continuous Drain Current: 4A @ 25°C
  • Maximum On-Resistance: 3.37Ohm @ 2A and 10V
  • Gate Charge: 13.46nC @ 10V
  • Input Capacitance: 549pF @ 25V
  • Mounting: Through-hole mountable
  • Package: Standard package of 15,000 pcs
  • Temperature Range: -55°C to 150°C
  • Manufacturer: Taiwan Semiconductor
  • Status: Active
  • REACH Regulations: Unaffected

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.3036 $52.1440
95+ $1.0697 $101.6215
145+ $1.0362 $150.2490
200+ $1.0028 $200.5600
260+ $0.9694 $252.0440
350+ $0.8691 $304.1850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 15,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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