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CSD13201W10

Part No CSD13201W10
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 12V 1.6A 4DSBGA
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Texas Instruments
Series NexFET™
Package Tape & Reel
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 34mOhm @ 1A, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.9 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 462 pF @ 6 V
Power Dissipation (Max) 1.2W (Ta)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-DSBGA (1x1)
Package / Case 4-UFBGA, DSBGA
Base Product Number CSD13201
Standard Package 3,000 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 580826-CSD13201W10
Ultra Librarian 3D Model Ultra Librarian CSD13201W10 CAD Model

Description

Introducing the Texas Instruments CSD13201W10 Power MOSFET

The CSD13201W10 is a cutting-edge power MOSFET brought to you by Texas Instruments, a leader in semiconductor solutions. Designed for efficiency and power management, this device is a perfect fit for a wide range of applications, from consumer electronics to industrial systems.

The CSD13201W10 is a single N-Channel MOSFET that comes in a compact WSON-6 (2x2) package, offering a space-saving solution without compromising on performance. This MOSFET is characterized by its low on-resistance (RDS(on)) of only 8.7 mΩ at VGS = 4.5V, which ensures minimal power loss and makes it an excellent choice for high-efficiency power management tasks.

Key Features

  • Ultra-Low On-Resistance: The device boasts an RDS(on) of 8.7 mΩ at a gate-source voltage of 4.5V, reducing conduction losses and improving overall efficiency.
  • High Continuous Drain Current: It supports a continuous drain current (ID) of 12 A, making it suitable for high-power applications.
  • Advanced Packaging: The CSD13201W10's WSON-6 (2x2) packaging is designed for optimal thermal performance and space-saving on PCBs.
  • Low Threshold Voltage: A low gate threshold voltage (VGS(th)) allows for operation at lower voltages, which can be advantageous in battery-powered devices.

Applications

The versatility of the CSD13201W10 MOSFET makes it ideal for a wide range of applications, including:

  • DC/DC converters
  • Power supply load switches
  • Battery management systems
  • Motor control circuits
  • Computing and server systems

With its robust performance and compact footprint, the CSD13201W10 from Texas Instruments is an excellent choice for designers looking to optimize their power management systems. Its high efficiency, reliability, and versatility make it a valuable component in any power-sensitive application. For detailed specifications, application notes, and design resources, visit the Texas Instruments website or contact their support team for personalized assistance.

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Pricing & Ordering

Quantity Unit Price Ext. Price
295+ $0.1710 $50.4450
715+ $0.1403 $100.3145
1,105+ $0.1359 $150.1695
1,525+ $0.1315 $200.5375
1,970+ $0.1271 $250.3870
2,635+ $0.1140 $300.3900
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 108,799 pieces
MOQ: 295 pcs
Order Increment : 1 pcs
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