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CSD18510Q5BT

Part No CSD18510Q5BT
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 300A 8VSON-CLIP / Trans MOSFET N-CH Si 40V 100A 8-Pin VSON-CLIP EP T/R
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Series NexFET
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 300A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Vgs(th) (Maximum) @ Id 2.3V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 153nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 11400pF @ 20V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 156W (Tc)
Rds On (Maximum) @ Id, Vgs 0.96 mOhm @ 32A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package 8-VSON-CLIP (5x6)
Package 8-PowerTDFN
Win Source Part Number 771869-CSD18510Q5BT
Popularity Medium
Supply and Demand Status Limited
Family Name CSD18510Q5B
ECCN EAR99
Country of Origin Philippines
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian CSD18510Q5BT CAD Model

Description

Overview of Texas Instruments CSD18510Q5BT MOSFET

The CSD18510Q5BT is a cutting-edge N-Channel NexFET™ power MOSFET from Texas Instruments, designed to deliver high-efficiency, low-resistance switching performance for a wide range of power management applications. This advanced semiconductor device is tailored to meet the stringent requirements of modern electronic systems, offering a perfect blend of low on-resistance and high-speed switching capabilities.

Key Features

  • Low On-Resistance: The CSD18510Q5BT boasts an ultra-low on-resistance (R<sub>DS(on)) of just 5.8 mΩ at V<sub>GS = 10 V, enabling high current handling with minimal conduction losses, making it an excellent choice for high-efficiency power supplies and DC-DC converters.
  • High Continuous Drain Current: With a high continuous drain current (I<sub>D) of 100 A, this MOSFET can handle significant power without overheating, ensuring reliable operation under heavy-load conditions.
  • Fast Switching Speed: The device's fast switching speed minimizes losses during power conversion, contributing to the overall efficiency of the system.
  • Thermal Management: The CSD18510Q5BT is encapsulated in a compact SON 5mm x 6mm plastic package, which features an exposed thermal pad for enhanced thermal dissipation, ensuring the device operates within safe temperature ranges even at high currents.
  • Enhanced Gate Charge: Optimized gate charge (Q<sub>g) characteristics facilitate reduced switching energy, which is critical for high-frequency power circuits.
  • Robustness: This MOSFET is designed to withstand harsh conditions and includes features such as Avalanche Ruggedness and RoHS compliance, making it suitable for rugged industrial applications.

Applications

The Texas Instruments CSD18510Q5BT is versatile and can be used in a variety of applications, including:

  • Server and Telecom Power Supplies
  • Motor Drives
  • DC-DC Converters
  • Power Blocks
  • Synchronous Buck Circuits
  • Battery Management Systems

With its excellent performance characteristics, the CSD18510Q5BT from Texas Instruments is an ideal choice for engineers looking to improve power density and efficiency in their next-generation electronic designs.

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.7297 $60.5395
70+ $1.6203 $113.4210
110+ $1.5655 $172.2050
155+ $1.4560 $225.6800
200+ $1.4013 $280.2600
250+ $1.3466 $336.6500
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Availability: 189,630 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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