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CSD19503KCS

Part No CSD19503KCS
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 94A TO220-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.4V @ 250μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 2730pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 188W (Tc)
Maximum Rds On at Id,Vgs 9.2 mOhm @ 60A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-220-3
Dimension TO-220-3
Win Source Part Number 202952-CSD19503KCS
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian CSD19503KCS CAD Model

Description

Product Description

The CSD19503KCS is a versatile MOSFET designed for high-efficiency power conversion. Ideal for cutting-edge electronic systems, it provides exceptional performance in a compact footprint.

Features and Benefits

  • Highly efficient low on-state resistance.
  • Excellent thermal characteristics.
  • Fast switching speed to improve system efficiency.
  • Durable and long-lasting under various conditions.

Applications

  • Data center power supplies.
  • Electric vehicle power systems.
  • Inverters for renewable energy systems.
  • Telecom power supplies.

Additional Details

Its specialized design accommodates a broad range of high-performance applications, supporting complex power management tasks with ease.

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Pricing & Ordering

Quantity Unit Price Ext. Price
19+ $2.6981 $51.2639
46+ $2.2139 $101.8394
70+ $2.1447 $150.1290
97+ $2.0755 $201.3235
125+ $2.0063 $250.7875
167+ $1.7988 $300.3996
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 50 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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