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TPS1101D

Part No TPS1101D
Manufacturer Texas Instruments
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 15V 2.3A 8-SOIC
Datasheet
Sample
ECAD Module
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Products specifications

Categories Discrete Semiconductor Products
Manufacturer Texas Instruments
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 15V
Continuous Drain Current at 25°C 2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 10V
Gate-Source Threshold Voltage 1.5V @ 250μA
Max Gate Charge 11.25nC @ 10V
Maximum Gate-Source Voltage +2V, -15V
Power Dissipation (Max) 791mW (Ta)
Maximum Rds On at Id,Vgs 90 mOhm @ 2.5A, 10V
Temperature Range - Operating -40°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package 8-SOIC
Dimension 8-SOIC (0.154", 3.90mm Width)
Win Source Part Number 033584-TPS1101D
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited

Description

Introducing the TPS1101D Power MOSFET from Texas Instruments

The TPS1101D is a high-quality Power MOSFET device designed and manufactured by Texas Instruments, a leader in the semiconductor industry. This device is specifically engineered to cater to a broad range of applications, providing both reliability and efficiency in power management solutions.

Constructed with advanced semiconductor technology, the TPS1101D boasts a low on-resistance, which is a critical feature for reducing power loss and improving overall efficiency in electronic circuits. The device operates as a single P-Channel enhancement-mode MOSFET, making it an ideal choice for switch and amplifier applications.

One of the standout features of the TPS1101D is its compact size. Encased in a small, surface-mount package, it is suitable for space-constrained applications while still delivering the high performance expected from Texas Instruments products. The device's package is designed for optimal thermal performance, ensuring stability and longevity even under high current operations.

The TPS1101D can handle a continuous drain current of up to 1.6 A, with a drain-source voltage of -20 V, making it robust enough for a variety of uses. Additionally, its logic-level input capability allows for direct interfacing with low-voltage control signals, which simplifies the design of power management systems.

Applications for the TPS1101D are diverse, ranging from power supply circuits, battery management systems, to load switches and motor control circuits. The versatility of this Power MOSFET makes it a go-to component for designers looking to enhance the performance and efficiency of their electronic products.

With Texas Instruments' commitment to quality, the TPS1101D is manufactured to meet high standards, ensuring reliable operation and a long service life. Whether for industrial, commercial, or consumer electronic applications, the TPS1101D is a smart choice for those seeking a high-performance Power MOSFET solution.

For detailed specifications, application notes, and support documentation, customers are encouraged to visit the official Texas Instruments website or contact their support team for further assistance.

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Pricing & Ordering

$0.3090
Quantity Unit Price Ext. Price
115+ $0.437 $50.255
280+ $0.359 $100.520
435+ $0.347 $150.945
600+ $0.336 $201.600
770+ $0.325 $250.250
1,035+ $0.291 $301.185
* The above prices does not include taxes and freight rates, which will be calculated on the order pages.
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Availability: 1,230 pieces
MOQ: 115 pcs
Order Increment : 1 pcs
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