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Same model may have multiple batches, images only for reference.
2SA1162-Y(T5L,T)
Same model may have multiple batches, images only for reference.

2SA1162-Y(T5L,T)

Part No 2SA1162-Y(T5L,T)
Manufacturer Toshiba Semiconductor and Storage
Catalog RF Transistors (BJT)
Description Trans GP BJT PNP 50V 0.15A 3-Pin S-Mini T/R
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Collector Base Voltage (VCBO) 50 V
Collector Emitter Voltage (VCEO) 50 V
Max Collector Current 150 mA
Maximum Operating Temperature 125 °C
Max Power Dissipation 150 mW
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 3
Packaging Tape & Reel
Radiation Hardening No
RoHS Compliant
Win Source Part Number 976883-2SA1162-Y(T5L,T)
Categories RF Transistors(BJT)
Manufacturer Toshiba Semiconductor and Storage
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian 2SA1162-Y(T5L,T) CAD Model

Description

The Toshiba 2SA1162-Y(T5L,T) is a surface mount RF transistor with a maximum power dissipation of 150 mW.

  • Collector base voltage (VCBO): 50V
  • Collector emitter voltage (VCEO): 50V
  • Maximum collector current: 150 mA
  • Operating temperature range: -55°C to 125°C
  • Packaging: Tape and reel
  • Pins: 3
  • RoHS compliant: Yes
  • Radiation hardened: No

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Pricing & Ordering

Quantity Unit Price Ext. Price
1,025+ $0.0490 $50.2250
2,485+ $0.0403 $100.1455
3,850+ $0.0390 $150.1500
5,310+ $0.0377 $200.1870
6,850+ $0.0365 $250.0250
9,175+ $0.0327 $300.0225
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 113,350 pieces
MOQ: 1025 pcs
Order Increment : 1 pcs
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