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Same model may have multiple batches, images only for reference.
2SA1163-BL,LF Real Image
Same model may have multiple batches, images only for reference.

2SA1163-BL,LF

Part No 2SA1163-BL,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS PNP 120V 0.1A SMINI / Bipolar (BJT) Transistor PNP 120 V 100 mA 100MHz 150 mW Surface Mount S-Mini
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors>Bipolar (BJT)>Single Bipolar Transistors
Mfr Toshiba Semiconductor and Storage
Series -
Package Tape & Reel
Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 120 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 350 @ 2mA, 6V
Power - Max 150 mW
Frequency - Transition 100MHz
Temperature Range - Operating 125°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package S-Mini
Base Product Number 2SA1163
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Standard Package 3,000 pcs
Win Source Part Number 1380727-2SA1163-BL,LF
Ultra Librarian 3D Model Ultra Librarian 2SA1163-BL,LF CAD Model

Description

The 2SA1163-BL,LF is a PNP single bipolar transistor from Toshiba Semiconductor and Storage.

  • Power Rating: 150 mW
  • Voltage Rating: 120 V
  • Collector Current: 100 mA (Max)
  • Vce Saturation: 300mV @ 1mA, 10mA
  • Current Cutoff: 100nA (ICBO)
  • DC Current Gain (hFE): 350 @ 2mA, 6V
  • Frequency Transition: 100MHz
  • Mounting Type: Surface Mount
  • Package: TO-236-3, SC-59, SOT-23-3
  • MSL: 1 (Unlimited)

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