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Same model may have multiple batches, images only for reference.
2SC5714(TE12L,ZF) Real Image
Same model may have multiple batches, images only for reference.

2SC5714(TE12L,ZF)

Part No 2SC5714(TE12L,ZF)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 20V 4A PW-MINI / Bipolar (BJT) Transistor NPN 20 V 4 A 1 W Surface Mount PW-MINI
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Toshiba Semiconductor and Storage
Package Box
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 4 A
Voltage - Collector Emitter Breakdown (Max) 20 V
Vce Saturation (Max) @ Ib, Ic 150mV @ 32mA, 1.6A
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 500mA, 2V
Power - Max 1 W
Temperature Range - Operating 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package PW-MINI
Standard Package 1 pcs
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 855225-2SC5714(TE12L,ZF)
Ultra Librarian 3D Model Ultra Librarian 2SC5714(TE12L,ZF) CAD Model

Description

The 855225-2SC5714(TE12L,ZF) is a single bipolar transistor in a TO-243AA package. It is a NPN transistor with a maximum power rating of 1 W.

  • Type: NPN
  • Package: TO-243AA
  • Maximum Power Rating: 1 W
  • Voltage Breakdown (Collector-Emitter): 20 V
  • Maximum Collector Current: 4 A
  • Vce Saturation: 150mV @ a base current of 32mA and a collector current of 1.6A
  • DC Current Gain (hFE): 400 @ a collector current of 500mA and a collector-emitter voltage of 2V
  • Applications: Commonly used in power amplifiers, switching circuits, and voltage regulators
  • Manufacturer: Toshiba Semiconductor and Storage
  • Product Status: Active

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