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2SD1221-Y(Q)

Part No 2SD1221-Y(Q)
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors (BJT) - Single
Description TRANS NPN 60V 3A PW MOLD
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Bulk
Status Obsolete(EOL)
Transistor Polarity NPN
Maximum Current Collector 3A
VCEO Maximum Collector-Emitter Breakdown Voltage 60V
Max Vce (sat) 1V @ 300mA, 3A
Collector Cut-off Current(Max) 100μA (ICBO)
Typical Gain (hFE) (Min) 100 @ 500mA, 5V
Maximum Power Dissipation 1W
Frequency - Transition 3MHz
Temperature Range - Operating 150°C (TJ)
Mounting SMD (SMT)
Case / Package PW-MOLD
Win Source Part Number 1004523-2SD1221-Y(Q)
Popularity Medium
Supply and Demand Status Sufficient
Application Field Used in Automotive, Computers & Computer Peripherals, Communications & Networking, Consumer Electronics, Lighting, Sensing & Instrumentation, Industrial
Ultra Librarian 3D Model Ultra Librarian 2SD1221-Y(Q) CAD Model

Description

This electronic component is a Toshiba Semiconductor and Storage transistor with NPN polarity.

  • Frequency Transition: 3MHz
  • Status: Obsolete (EOL)
  • Collector-Emitter Breakdown Voltage: 60V
  • Maximum Current Collector: 3A
  • Maximum Power Dissipation: 1W
  • Typical Gain: 100 @ 500mA and 5V

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