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Same model may have multiple batches, images only for reference.
SSM3K2615TU,LF Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

SSM3K2615TU,LF

Part No SSM3K2615TU,LF
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Toshiba Semiconductor and Storage
Series π-MOSV
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 3.3V, 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 10 V
Power Dissipation (Max) 800mW (Ta)
Temperature Range - Operating 150°C
Mounting SMD (SMT)
Supplier Device Package UFM
Package / Case 3-SMD, Flat Leads
Base Product Number SSM3K2615
Other Names SSM3K2615TULFDKR,SSM3K2615TU,LF(B,SSM3K2615TULFCT,SSM3K2615TULFTR,SSM3K2615TULF,SSM3K2615TULF(B
Standard Package 3,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Win Source Part Number 1277936-SSM3K2615TU,LF
Ultra Librarian 3D Model Ultra Librarian SSM3K2615TU,LF CAD Model

Description

The Toshiba Semiconductor and Storage SSM3K2615TU,LF is an N-channel MOSFET electronic component used in discrete semiconductor products for FETs and MOSFETs.

  • Temperature Range: 150°C
  • Drain to Source Voltage: 60V
  • Continuous Drain Current: 2A @ 25°C
  • Maximum On Resistance: 300mOhm @ 1A, 10V
  • Gate Charge: 6 nC @ 10 V
  • Input Capacitance: 150 pF @ 10 V
  • Vgs(th): 2V @ 1mA
  • Series: π-MOSV
  • Supplier Device Package: UFM

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