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TK31J60W,S1VQ

Part No TK31J60W,S1VQ
Manufacturer Toshiba Semiconductor and Storage
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N CH 600V 30.8A TO-3P(N)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.7V @ 1.5mA
Max Gate Charge 86nC @ 10V
Max Input Capacitance 3000pF @ 300V
Maximum Gate-Source Voltage ±30V
FET Feature Super Junction
Power Dissipation (Max) 230W (Tc)
Maximum Rds On at Id,Vgs 88 mOhm @ 15.4A, 10V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P(N)
Dimension TO-3P-3, SC-65-3
Win Source Part Number 138422-TK31J60W,S1VQ
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TK31J60W,S1VQ CAD Model

Description

The Toshiba Semiconductor and Storage TK31J60W,S1VQ is a MOSFET technology product with a super junction FET feature.

  • Polarity: N-Channel
  • Maximum Power Dissipation: 230W (Tc)
  • Win Source Part Number: 138422-TK31J60W,S1VQ
  • Package: TO-3P(N)
  • Dimension: TO-3P-3, SC-65-3
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current at 25°C: 30.8A (Ta)
  • Gate-Source Threshold Voltage: 3.7V @ 1.5mA
  • Maximum Gate Charge: 86nC @ 10V
  • Maximum Input Capacitance: 3000pF @ 300V
  • Maximum Rds On at Id,Vgs: 88 mOhm @ 15.4A, 10V
  • Category: Discrete Semiconductor Products
  • Popularity Rating: medium
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.8203 $62.5624
18+ $6.4167 $115.5006
28+ $6.2162 $174.0536
39+ $6.0157 $234.6123
50+ $5.8151 $290.7550
67+ $5.2136 $349.3112
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 1,630 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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